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| AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pbfree (meets ROHS & Sony 259 specifications). AOL1401L is a Green Product ordering option. AOL1401 and AOL1401L are electrically identical. Ultra SO-8TM Top View Fits SOIC8 footprint ! D Features VDS (V) = -38V ID = -85A RDS(ON) < 8.5m (VGS = -10V) RDS(ON) < 10m (VGS = -4.5V) ESD Rating: 3000V HBM D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G Power Dissipation B Power Dissipation A C Maximum -38 25 -85 -62 -120 -12 -9 100 50 2.1 1.3 -55 to 175 Units V V TC=25C TC=100C TA=25C TA=70C TC=25C TC=100C TA=25C TA=70C IDSM PD PDSM TJ, TSTG ID IDM A W W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 21 48 1 Max 25 60 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1401 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-10V, ID=-20A VDS=-5V, ID=-20A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-20A TJ=125C Min -38 -100 -500 1 10 -3.5 8.5 11 10 -1 14.5 4560 Typ Max Units V nA A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC -1.5 -120 -2.2 6.8 9.1 7.9 50 0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3800 560 350 7.5 61.2 30.8 11.88 15.4 13.5 17 97 43 30 29 9 74 37 VGS=-10V, VDS=-20V, ID=-20A VGS=-10V, VDS=-20V, RL=1, RGEN=3 IF=-20A, dI/dt=100A/s IF=-20A, dI/dt=100A/s 36 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. A Rev 0: September 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 -14V 90 -6V -ID (A) 60 -4V 30 Vgs=-3.5V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 9 Normalized On-Resistance 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) -4.5V 20 125C 15 10 25C -10V 25 30 VDS=-5V 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-20V ID=-20A RDS(ON) (m) 8 VGS=-10V 7 VGS=-20V 6 VGS=-10V ID=-20A 30 ID=-20A 25 20 -IS (A) 125C 15 10 25C 5 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E+01 1.0E+00 1.0E-01 RDS(ON) (m) 125C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 4.9 6 Alpha & Omega Semiconductor, Ltd. AOL1401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-20V ID=-20A Capacitance (pF) 5000 Ciss 4000 8 -VGS (Volts) 6 3000 4 2000 Coss 1000 Crss 2 0 0 10 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 70 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 1000.0 TJ(Max)=175C, T A=25C 100.0 -ID (Amps) 10s Power (W) RDS(ON) limited 100s 1ms 10ms 1.0 DC 100m 1000 800 600 400 200 0 0.0001 TJ(Max)=175C TA=25C 10.0 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=T on/T TJ,PK=T C+PDM.ZJC.RJC RJC=1.5C/W 1 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note B) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4.9 6 Alpha & Omega Semiconductor, Ltd. AOL1401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 60 50 Power Dissipation (W) 90 Power (W) 40 30 TA=25C 20 30 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Power De-rating (Note B) 0 0.01 60 0.1 1 10 100 1000 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toAmbient (Note H) 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Current rating -ID(A) 100 ZJA Normalized Transient Thermal Resistance 10 1 0.1 0.01 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 4.9 6 Alpha & Omega Semiconductor, Ltd. |
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